MTM4N45 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

J.S.IILS.U
Cx
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, line.
TELEPHONE: [phone]
[phone]
FAX: [phone]
IRF430-433/IRF830-833
MTM/MTP4N45/4N50
N-Channel Power MOSFETs,
4.5 A, 450 V/500 V
Description
These devices are n-channel, enhancement mode, power
MOSFETs designed especially for high voltage, high spaed
applications, such as off-line switching power supplies,
UPS, AC and DC motor controls, relay and solenoid
drivers.
TO-220AB
• VGS Rated at ± 20 V
• Silicon Gate for Fast Switching Speeds
• IDSS. VDs(on), SOA and VQS(ih) Specified at Elevated
Temperature
• Rugged
Maximum Ratings
IRF430
IRF431
IRF432
IRF433
MTM4N45
MTM4N50
IRF830
IRF831
IRF832
IRF833
MTP4N4S
MTP4N50
Symbol
Characteristic
VDss
Drain to Source Voltage
VDGR
Drain to Gate Voltage
RQS = 20 kfl
VGS
Gate to Source Voltage
Tj, Tslfl Operating Junction and
Storage Temperature
TL
Maximum Lead Temperature
for Soldering Purposes,
1/8' From Case for 5 s
Maximum On-State Characteristics
RDS(on)
Static Drain-to-Source
On Resistance
ID
Drain Current
Continuous
Pulsed
Maximum Thermal Characteristics
RSJC
Thermal Resistance,
Junction to Case
RSJA
Thermal Resistance,
Junction to Ambient
PD
Total Power Dissipation
at Tc - 25°C
Rating
IRF430/432
IRF830/B32
MTM/MTP4N50
500
500
±20
-55 to +150
275
Rating
IRF431/433
IRF831/833
MTM/MTP4N4S
450
450
±20
-55 to +150
275
IRF430/431
IRF830/831
1.5
4.5
18
1.67
60
75
IRF432/433
IRF832/833
2.0
MTM/MTP4N45
MTM/MTP4N45
1.5
4.0
4.0
16
10
1.67
1.67
60
60
75
75
Unit
V
V
V
•c
•c
n
A
"C/W
°c/w
w
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
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to press, However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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