MTM40N20 Datasheet, PDF (1/2 Pages) Motorola, Inc – POWER FIELD EFFECT TRANSISTOR

j£i±£u
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, LJnc.
TELEPHONE: [phone]
[phone]
FAX: [phone]
Designer's Data Sheet
Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate
This TMOS Power FET is designed for high speed power switch-
ing applications such as switching regulators, converters, solenoid
and relay drivers.
• Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100°C
• Designer's Data — losS- Vos(on)- vGS(th) and SOA Specified
at Elevated Temperature
• Rugged — SOA is Power Dissipation Limited
• Source-tc-Drain Diode Characterized for Use With Inductive Loads
TT
TMOS
MTM40N20
TMOS POWER FET
40 AMPERES
RDS(on) = <>•«» OHM
209 VOLTS
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage (RGS " 1Mn'
Gate-Source Voltage
Continuous
Non-repetitive (tp « 50 ^.S)
Drain Current — Continuous
— Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
Valua
200
200
*20
±40
40
200
250
2
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Wans
W/°C
Operating and Storage Temperature Range
Tj, Tstg
-65 to 150
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
RflJC
0.5
°C/W
— Junction to Ambient
R«JA
30
Maximum Lead Temperature for Soldering
TL
Purposes, 1/8" from case for 6 seconds
300
°C
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Char*et«ri$tlc
Symbol
Mln
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VQS = 0. ID = 0-25 mA>
V(BR)DSS
200
MTM40N20
Zero Gate Voltage Drain Current
(vDs = Rated VDSS- VGS = °>
(VDS = Rated VDSS. VGS - 0, Tj = 125°C)
Gate-Bodv Leakage Current, Forward (VQSF - 20Vdc, VDS= °'
Gate-Body Leakage Current, Reverse (VGSR - 20 Vdc, VDS= °'
IDSS
—
!GSSF
—
IGSSR
—
TO-204AE
Unit
—
Vdc
/iAdc
10
100
100
nAdc
100
nAdc
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors