MTM2N85 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Power Field Effect Transistor

/£ii£ij <z3£.mi-L,on.auctoi L/^ioauata, Line.
C7
tj
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
Designer's Data Sheet
Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate TMOS
These TMOS Power FETs are designed for high voltage, high
speed power switching applications such as switching regulators,
converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100°C
• Designer's Data — IQSS. vDS(on). vGS(th) »"d SOA Specified
at Elevated Temperature
• Rugged — SOA is Power Dissipation Limited
• Source-to-Drain Diode Characterized for Use With Inductive Loads
MTM2N85
MTM2N90
MTP2N85
MTP2N90
TMOS POWER FETs
2 AMPERES
'DSIonl = 8 OHMS
850 »nd 900 VOLTS
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage (RQS = 1Mfl>
Gate-Source Voltage — Continuous
— Non-repetitive (tp =s SO /is)
Drain Current — Continuous
— Pulsed
Total Power Dissipation @ Trj « 25°C
Derate above 25°C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance
Junction to Case
Junction to Ambient
TO-204
TO-220
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 5 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
'DM
PD
Tj. Ts,g
"»JC
"«JA
TL
MTM2N85 MTM2N90
Unit
MTP2N8S MTP2N90
850
900
Vdc
850
900
Vdc
±20
Vdc
±40
Vpk
2
Adc
7
75
Watts
0.6
wrc
-65 to 150
°C
•c/w
1.67
30
62.5
275
•c
MTM2N8S
MTM2N90
TO-204AA
TO-220AB
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumesno responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors