MTM2N50 Datasheet, PDF (1/2 Pages) Motorola, Inc – POWER FIELD EFFECT TRANSISTOR

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate
This TMOS Power FETis designed for high voltage, high speed
power switching applications such as switching regulators, con-
verters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100'C
• Designer's Data — IDSS< vDS(on). Vcs(th) and SOA Specified
at Elevated Temperature
• Rugged — SOA is Power Dissipation Limited
• Source-to-Drain Diode Characterized for Use With Inductive Loads
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
(«GS = 1Mftl
Gate-Source Voltage — Continuous
— Non-repetitive (tp * 50 ins)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TQ = 25°C
Derate above 25"C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes. 1/8" from case for 5 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
TJ, Tstg
"we
R0JA
TL
Value
500
500
±20
±40
2
7
75
0.6
-65 to 150
1.67
30
300
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Watts
W/°C
°C
°c/w
°c
MTM2N50
TMOS POWER FET
2 AMPERES
RDS(on) = 4 OHMS
500 VOLTS
TO-204AA
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to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets nre current before placing orders.
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