MTM25N10 Datasheet, PDF (1/2 Pages) Motorola, Inc – POWER FIELD EFFECT TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i, IJnc.
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Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate
This TWOS Power FET is designed for high speed power
switching applications such as switching regulators, converters,
solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100°C
• Designer's Data — IDSS. VDS(OO). vGS|th) a"d SOA Specified
at Elevated Temperature
• Rugged — SOA is Power Dissipation Limited
• Source-to-Drain Diode Characterized for Use With Inductive Loads
TMOS
MAXIMUM RATINGS
Rating
Drain-Source Voltae
Drain-Gate Voltage IRQS " 1 Mn)
Gate-Source Voltage
Continuous
Non-repetitive (tp «. 50 us)
Drain Current — Continuous
— Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Symbol
VDSS
VDGR
VGS
VGSM
ID
'DM
PD
Value
100
100
^20
±40
25
105
ISO
1.2
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
TJ' Tstg
-66 to 160
Thermal Resistance — Junction to Case
R»JC
0.83
— Junction to Ambient
RUJA
30
Maximum Lead Temperature for Soldering
TL
300
Purposes, 1/S" from case for 5 seconds
ELECTRICAL CHARACTERISTICS — (Tc = 2S°C unless otherwise noted)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0, ID = 0-25 mA)
Zero Gate Voltage Drain Current
<VDS = Rated Vpss. VQS = 0)
(Vos = Rated VDSs.
VGS = 0. Tj = 125°C)
Gate-Body Leekage Current, Forward
(VGSF = 20 vdc, VDS - o>
Gate-Body Leakage Current, Reverse
(VQSR - 20 vdc, VDS = o>
V(BR)DSS
100
—
IDSS
—
10
100
]GSSF
—
100
IGSSR
—
100
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Watts
W/°C
°C
"CAM
°C
Unit
Vdc
ItMc
nAdc
nAdc
MTM25N10
TMOS POWER FET
25 AMPERES
ROS(on) = a-"* OHM
100 VOLTS
TO-204AE
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheetsare current before placing orders.
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