MTM20P10 Datasheet, PDF (1/2 Pages) Motorola, Inc – POWER FIELD EFFECT TRANSISTOR

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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Designer's Data Sheet
Power Field Effect Transistor
P-Channel Enhancement-Mode
Silicon Gate
This TMOS Power FET is designed for medium voltage, high
speed power switching applications such as switching regulators,
converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100°C
• Designer's Data —IDSS- vDS(on)- VQS(th) and SOA sPecified
at Elevated Temperature
• Rugged — SOA is Power Dissipation Limited
• Source-to-Dram Diode Characterized for Use With Inductive
Loads
TMQS
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
(RGS = 1 M«)
Gate-Source Voltage
Continuous
Non-repetitive (tp *", 50 MS)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 5 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
'DM
PD
Tj- Tsfg
«SE
TL
Vilira
100
100
±20
±40
20
30
125
1
-65 to 150
i
30
300
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Watts
WVC
°C
•c/w
°c
MTM20P10
TMOS POWER FET
20 AMPERES
RDS(on)= 0.15 OHM
100 VOLTS
TO-204AA
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