MTM15N20 Datasheet, PDF (1/2 Pages) Motorola, Inc – POWER FIELD EFFECT TRANSISTOR

-Conduakoi ZPioducti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MTM15N20
Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate TMOS
TELEPHONE: [phone]
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FAX: [phone]
TO218AC
MAXIMUM RATINGS
Drain-Source Voltage
Drain-Gale Voltage (RQS ' 1 Mil)
Gate-Source Voltage
Continuous
Non-repetitive (tp * 50 >/sl
Drain Current — Continuous
- Pulsed
Total Power Dissipation &> TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 5 seconds
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
TJ, TS|B
"we
RftJA
TL
MTH or MTM
1SN20
200
200
t20
±40
15
80
150
1.2
- 6510 150
0.83
30
275
ELECTRICAL CHARACTERISTICS (Tc = 25"C unless otherwise noted)
Characteristic
Symbol
Mln
Max
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
VIBRIOSS ²⁰⁰
—
(VGS - 0, ID = 0.25 mA|
MTH1SN20, MTM15N20
Zero Gate Voltage Drain Current
(VDS - Rated VDSS, VGs - "1
(Tj = 125°C>
Gate-Body Leakage Current. Forward
<vGSF - 20 Vdc, VDS - 01
Gate Body Leakage Current. Reverse
<VGSR = zo Vdc. VDS = ")
'DSS
-
10
100
IGSSF
—
100
IGSSR
—
100
Vdc
Vdc
Vdc
Vpk
Adc
Watts
W/"C
"C
"C/W
"C
Unit
Vdc
/iAdc
nAdc
nAdc
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.f Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.
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