MS1261 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

<^£,m.L-L.onauctoi iJ-^i
20 STERNAVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
RF & MICROWAVE TRANSISTORS
VHP MOBILE APPLICATIONS
. Features
• 175MHz
• 12.5 VOLTS
• POUT = 15 WATTS
• Gp = 12 dB MINIMUM
• INPUT IMPEDANCE MATCHING
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1261 is a Class C 12.5V epitaxial silicon NPN planar
transistor designed primarily for UHF communications. This
devices utilizes a gold metallized, emitter ballasted die
geometry for superior reliability and infinite VSWR capability.
TELEPHONE: [phone]
[phone]
FAX: [phone]
MS1261
.2804LSTUD(M122)
epoxy sealed
PIN CONNECTION
1. Collector
2. Emitter
ABSOUITE MAXIMUM RATINGS (Tease = 25 C)
Svmbol
VCBO
VCEO
VCES
VEBO
Ic
PDISS
Tj
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
RlH(J-C)
Thermal Resistance Junction-case
Value
36
18
36
4.0
2.5
34
+200
-65 to +150
8.75
Unit
V
V
V
V
A
w
°c
°c
°C/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors