MRF914 Datasheet, PDF (1/3 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

^smi-Conductoi ZPioducti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
TELEPHONE: [phone]
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FAX: [phone]
MRF914
Features
• Silicon NPN, High Frequency Transistor
• High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz
• Low Noise Figure: NF = 2.5 dB (typ) @ f = 500 MHz
• High FT - 4.5 GHz (typ) @ 1C = 20 mAdc
TO-72
DESCRIPTION:
Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high
speed switching applications.
ABSOLUTE MAXIMUM RATINGS ITcase = 25 C)
Symbol
Parameter
VCFH
VCBO
VEBo
Ic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Thermal Data
PD
Total Device Dissipation @ TA = 25° C
Derate ahnve ?S°C
ELECTRICAL SPECIFICATIONS (Tease-25 Cl
Value
12
20
3.0
40
200
1R
Unit
Vdc
Vdc
Vdc
mA
mWatts
mW/ ° P.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> N.ISemi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
M Semi-Conductors encourages customers to verify that datasheets are current before placing orders.