MRF581 Datasheet, PDF (1/3 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

-^emi-Conducto'i {Ptoducti., Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
features
. Low Noise - 2.5 dB @ 500 MHZ
• High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
• Ftau-5.0 GHz @ 10v, 75mA
• Cost Effective MacroX Package
TELEPHONE: [phone]
[phone]
MRF581/MRF581A
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tease = 25°C,
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
Ic
Collector Current
MRF581 MRF581A
Unit
18
15
Vdc
30
Vdc
2.5
Vdc
200
mA
Thermal Data
p
D
P
D
Tstg
Total Device Dissipation @ TC = 50°C
Derate above 50°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Junction Temperature Range
' Jmax
Maximum Junction Temperature
2.5
25
1.25
10
-65 to +150
150
Watts
mW/°C
Watts
mW/°C
°C
°c
NJ Semi-Conductorsreserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
M Semi-Conductors encourages customers to verify that datasheets nre current before placing orders.
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