MRF497 Datasheet, PDF (1/2 Pages) Motorola, Inc – NPN SILICON RF POWER TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
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The RF Line
NPN SILICON RF POWER TRANSISTOR
, , , designed for 12.5 volt VHP large-signal power amplifier appli-
cations in commercial and industrial equipment, operating in the
25 to 50 MHz frequency range.
• Low-Cost, Common-Emitter TQ-22GAB Package
• Specified 12.5 V, 50 MHz Performance —
Output Power = 40 Watts
Power Gam = 10 dB Min
Efficiency = 60% Min
• Load Mismatch Capability at Rated Voltage and RF Drive
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector -Base Voltage
Eminer-Base Voltage
Collector-Current — Continuous
Total Device Dissipation
Derate above 25°C
" 25°C |1)
Storage Temperature Range
Symbol
Unit
4o
60
PD
87 S
Wans
05
mW/°C
65 to *t 50 "C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case {2)
RBJC
2o
[DThis device is designed for RFoperation The total device dissipation rating appli«
only whan the device is operated as an RF amplifier
12) Thermal Resistance if delermned under specified RF operating conditions by nfr
rtieasufem«nt techniques
FIGURE 1 — 50 MHz TEST CIRCUIT
C1 —Area 469
C2 C3 — AfCO 466
CS— 100 M* 'SVdc Eltctro'ytic
C6 - ft 001 *iF OK Carafe
m — iflfl i 0 Wan f»«p«or
L1 — 3 Tumi #U AWG Wir* I V ID
12 — 1 1 2 Turn* #14 AWO Wir» 1 2
L3 — U Turns f 1fi AWG Wire 1 4' 10
CZ^ LI
RFC2 - 3 Ftrromib* •M-9t04$ 38 BW4* on i»H AWG
S — Firroxcub* »M-*K 65/36
Board MIMN* — Epov F»b»»fllm 0 0*J' ihtck
MRF497
40 W BO MHz
RF POWER
TRANSISTOR
NPN SILICON
O —M --
STYLi I
PlWI BAK
J EWTTlfl
i coufCTW
lEMTTER
1 &i
viifM -SC
1 CtWTIIOLLING WMCNSCN IhtCH
3 OH I DEFINES 4 fflNt WWH AIL
Lf AC flWCdUUllTf S ME tUOV*
inujiyTni_ **HO
«* | m : MM ; mt «T1
n«j : UTS ! oTw o^l
m l JB | awI«»_
JM; 101 | Din am
t± ^{IM -- '}
,.H^i _{pa'»tf, iWiiiJ.T}1_,I_m&.
i^{i "}-ⁱ I^I m ^{- I}l^'--^mti^{^}«^.T•^-I^|
CASE 221A-04
TO-220AB
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to Be both accurate and reliable at the time of going
to press. However, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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