MRF448 Datasheet, PDF (1/2 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
^Products.,
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for high-voltage applications as a high-power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
• Specified 50 Volt, 30 MHz Characteristics
Output Power = 250 W
Minimum Gain = 12 dB
Efficiency = 45%
• Intermodulation Distortion @ 250 W (PEP) —
IMD = -30dB(Max)
• 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
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MRF448
250 W, 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Withstand Current — 10s
Total Device Dissipation @ TC = 25°C (1 )
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
"c
—
PD
Tstg
Symbol
ROJC
CASE 211-11
Value
50
100
4.0
16
20
290
1.67
-65 to +150
Max
0.6
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.)
Characteristic
Symbol
Win
Typ
Max
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Ic = 200 mAdc, IB = 0)
V(BR)CEO
50
—
—
Collector-Emitter Breakdown Voltage (Ic = 100 mAdc, VBE - 0)
V(BR)CES
100
—
—
Collector-Base Breakdown Voltage (Ic = 100 mAdc, IE = 0)
V(BR)CBO
100
—
—
Emitter-Base Breakdown Voltage (IE = 10 mAdc, Ic = 0)
V(BR)EBO
4.0
—
—
NOTE:
1. PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions.
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Unit
°C/W
Unit
Vdc
Vdc
Vdc
Vdc
(continued)