MRF327 Datasheet, PDF (1/2 Pages) Motorola, Inc – BROADBAND RF POWER TRANSISTOR NPN SILICON

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The RF Line
NPN Silicon
RF Power Transistor
MRF327
. . . designed primarily for wideband large-signal output amplifier stages in the
100 to 500 MHz frequency range.
• Guaranteed Performance @ 400 MHz, 28 Vdc
Output Power = 80 Watts over 225 to 400 MHz Band
Minimum Gain = 7.3 dB @ 400 MHz
• Built-in Matching Network for Broadband Operation Using Double Match
Technique
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability Applications
« Characterized for 100 to 500 MHz
SOW, 100 to 500 MHz
CONTROLLED "Q"
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
— Peak
VCEO
VCBO
VEBO
"c
Total Device Dissipation @ TC = 25°C (1 )
PD
Derate above 25°C
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Value
33
60
4.0
9.0
12
250
1.43
-65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°f*
Symbol
Rejc
CASE 316-01, STYLE 1
Max
Unit
0.7
°C/W
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(1C = 80 mAdc, IB = 0)
V(BR)CEO
33
—
—
Vdc
Collector-Emitter Breakdown Voltage
(lc = 80 mAdc, VBE = 0)
Emitter-Base Breakdown Voltage
(IE = 8.0 mAdc, lc = 0)
V(BR)CES
60
—
V(BR)EBO
4.0
—
—
Vdc
—
Vdc
Collector-Base Breakdown Voltage
(lc = 80 mAdc, lc = 0)
V(BR)CBO
60
—
—
Vdc
Collector Cutoff Current
(VCB = 30 vdc, IE = o>
ICBO
—
—
5.0
mAdc
ON CHARACTERISTICS
I DCCurrent Gain (lc = 4.0 Adc, VCE = 5.0Vdc)
hFE
20
80
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1 .0 MHz)
Cob
—
95
125
PF
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.