MRF207 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – The RF Line

<£e.mi-(landuai oi
, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MRF207, MRF208, MRF209 (S.L>CON)
TELEPHONE: [phone]
[phone]
FAX: [phone]
The RF Line
NPN SILICON RF POWER TRANSISTORS
. . . designed for 12.5 Volt large-signal power amplifier applications
in communications equipment operating at 220 MHz.
• Specified 1 2.5 Volt, 220 MHz Characteristics -
Output Power = 1.0 W - MRF207
10W-MRF208
25 W - MRF209
Minimum Gain = 8.2 dB —MRF207
10dB-MRF208
4.4dB-MRF209
• Balanced-Emitter Construction to provide the designer with the de-
vice technology that assures ruggedness and resists transistor
damage caused by load mismatch.
1.0, 10, 25 WATTS - 220 MHz
NPN SILICON
RF POWER
TRANSISTORS
MAXIMUM RATINGS
Rating
Symbol MRF207 MRF208J MRF209 Unit
Collector-Emitter Voltage
Collector-Bata Voltage
VCEO " ' — 18 •• •
VCBO *
36
• Vdc
. Vdc
Emitter-Bate Voltage
^EBO '
4.0
Vdc
Collector Current -Continuous
<c
Total Device Dissipation ®TC-250CH>
PD
Derate above 25° C
Storage Temperature Rang*
Tsw
Stud Torque' 'I
04
2.0
4.0
3.5
37.5
50
20
214
286
-65 to +2OO
6.S
Adc
Watts
mvW°C
°C
in. Ib.
ID These devices are designed for RF operation. Tha total device
dissipation rating applies only when the devices are operated as
RF amplifier!.
{2) For Repeated Assembly use 5 in. Ib.
MRF207
MRF208
MRF209
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished bv N.ISemi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
VI Semi-Conductors encourages customers to verity that datasheets lire current before placing orders.