MRF175GU Datasheet, PDF (1/2 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FETs

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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The RF MOSFET Line
RF Power
Field-Effect Transistors
N-Channel Enhancement-Mode
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
• Guaranteed Performance
MRF175GV @ 28 V, 225 MHz ("V" Suffix)
Output Power — 200 Watts
Power Gain — 14 dB Typ
Efficiency — 65% Typ
MRF175GU @ 28 V, 400 MHz ("U" Suffix)
Output Power — 150 Watts
Power Gain — 12 dB Typ
Efficiency — 55% Typ
« 100% Ruggedness Tested At Rated Output Power
• Low Thermal Resistance
GO-
. Low Crss —20 pF Typ 9 VDS = 28 V
GO-
s
(FLANGE)
MRF175GU
MRF175GV
200/150 WATTS, 28 V, 500 MHz
N-CHANNEL MOS
BROADBAND
RF POWER FETs
CASE 375-04, STYLE 2
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
(RGS = 1,OMfl)
Gate-Source Voltage
Drain Current — Continuous
Total Device Dissipation @ Tc = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (Tc = 25»C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS (1)
Drain-Source Breakdown Voltage
_JVGS = 0,lD = 50mA)
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
__JVps = 28V,VQS =0)
Gate-Source Leakage Current
IGSS
(VGS = 20 V, Vrjs = 0)
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
Tj
Symbol
ROJC
Mln
65
—
—
Value
65
65
±40
26
400
2.27
-6510+150
200
MaX
0.44
TVP
Max
—
—
—
2.5
—
1.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°c
Unit
°C/W
Unit
Vdc
mAdc
uAdc
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