MRF173 Datasheet, PDF (1/2 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER MOSFETs

^s.mi'Con.dacto'i ^P
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One,
TELEPHONE: [phone]
[phone]
FAX: [phone]
The RF MOSFET Line
RF Power
Field Effect Transistors
N-Channel Enhancement Mode MOSFETs
Designed for broadband commercial and military applications up to 200 MHz
frequency range. The high-power, high-gain and broadband performance of
these devices make possible solid state transmitters for FM broadcast or TV
channel frequency bands.
• Guaranteed Performance at 150 MHz, 28 V:
Output Power = 80 W
Gain = 11 dB(13dBTyp)
Efficiency = 55% Min. (60% Typ) .
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride 'Passivated Die for Enhanced Reliability
• Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz
• Excellent Thermal Stability; Suited for Class A Operation
MRF173
MRF173CQ
80 W, 28 V, 175 MHz
N-CHANNEL
BROADBAND
RF POWER MOSFETs
MAXIMUM RATINGS
Rating
Symbol
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Drain Current — Continuous
Total Device Dissipation ® TC = 25°C
Derate above 25°C
VDSS
VDGO
VGS
ID
PD
Storage Temperature Range
Tstg
Operating Temperature Range
Tj
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Value
65
65
±40
9.0
220
1.26
-65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/"C
°C
°C
CASE 211-11, STYLE 2
(MRF173)
CASE 316-01,
(MRF173CQ)
Symbol
Max
Unit
RWC
0.8
°c/w
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
Symbol
Mln
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VDS = 0 V, VQS = 0 V) ID = 50 mA
V(BR)DSS
65
—
—
V
Zero Gate Voltage Drain Current (VDs = 28 V, VQS = 0 V)
IDSS
—
—
2.0
mA
Gate-Source Leakage Current (VGS «= 40 V, VDS = 0 V)
IGSS
-
-
1.0
liA
ON CHARACTERISTICS
Gate Threshold Voltage (VDS * 10 V, ID = 50 mA)
Drain-Source On-Voltage (VDS(0n), VGS = 10 V, ID = 3.0 A)
Forward Transconductance (VDS = 10 V, Irj = 2.0 A)
VGS(th)
1.0
3.0
6.0
V
VDS(on)
—
—
1.4
V
9fs
1.8
2.2
—
mhos
(continued)
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Quality Semi-Conductors