MRF148A Datasheet, PDF (1/2 Pages) Advanced Semiconductor – N-Channel Enhancement Mode VHF POWER MOSFET

^Etni-Conduatoi ZPioaucti,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MRF148A
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Designed for power amplifier applications in industrial,
commercial and amateur radio equipment to 175MHz.
• Superior high order IMD
IMD(d3) (SOW PEP): -35 dB (Typ.)
IMD(d11) (30W PEP): -60 dB (Typ.)
• Specified 50V, 30MHz characteristics:
Output power: SOW
Gain: 18dB (Typ.)
Efficiency: 40% (Typ.)
• 100% tested for load mismatch at all phase angles
with 30:1 VSWR
• Lower reverse transfer capacitance (3.0 pF typ.)
Product Image
CASE 211-07,
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Dram-Gate Voltage
Gate-Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 26CC
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance., Junction to Case
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
Tj
Symbol
Rejc
Value
120
120
±40
6.0
115
0.66
-65 to +150
200
Max
1.52
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°c
°C
Unit
°C/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
I" "ss £T?rS"^rb>HN'rSemi-C°ntois «*"«* * * both accurate -L reliable at the tL o?go ng
to press However, NJ Sem.-Conductors assumes no responsibility for any errors or omissions discovered in its use
N.I VmK onductors enconntges customers to verify that datasheets are current before placing orders.