MRF134 Datasheet, PDF (1/2 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FET

tSsmi-donduato'i ZPtoaucti, {Jnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
The RF MOSFET Line
RF Power Field-Effect Transistor
N-Channel Enhancement-Mode
.. . designed for wideband large-signal amplifier and oscillator applications up
to 400 MHz range.
• Guaranteed 28 Volt, 150 MHz Performance
Output Power = 5.0 Watts
Minimum Gain = 11 dB
Efficiency — 55% (Typical)
• Small-Signal and Large-Signal Characterization
• Typical Performance at 400 MHz, 28 Vdc, 5.0 W
Output = 10.6 dB Gain
• 100% Tested For Load Mismatch At All Phase Angles
With 30:1 VSWR
« Low Noise Figure — 2.0 dB (Typ) at 200 mA, 150 MHz
• Excellent Thermal Stability, Ideally Suited For Class A
Operation
TELEPHONE: [phone]
[phone]
FAX: [phone]
MRF134
5.0 W, to 400 MHz
N-CHANNEL MOS
BROADBAND RF POWER
FET
CASE 211-07,
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
Drain-Gate Voltage
(RGS = 1 -0 MQ)
VDS$
65
Vdc
VDGR
65
Vdc
Gate-Source Voltage
VGS
±40
Vdc
Drain Current — Continuous
ID
0.9
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
17.5
Watts
0.1
W/°C
Storage Temperature Range
Tstg
-65 to +150
°c
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RSJC
10
°c/w
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
NJ Semi-Conductois reserves the right to change test conditions, parameter limits and package dimensions without
not.ce. fnformat,on furnished b> NJ Semi-Conductors is believed to be both accurate L reliable at the tL o?go ng
to p««. However, NJ Sem.-Conductors assumes no responsibility for any errors or omissions discovered in its use
M .Vrm-( unductors entourages customers to verify that datasheets are current before placing orders.
OiinlJfv