MPS8099 Datasheet, PDF (1/2 Pages) Samsung semiconductor – NPN (AMPLIFIER TRANSISTOR)

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ioaucti, L/nc.
TELEPHONE: [phone]
[phone]
FAX: [phone]
NPN - MPS8099; PNP -
MPS8599
Amplifier Transistors
Voltage and Current are Negative
for PNP Transistors
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
Ic
PD
Value
80
80
6.0
500
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
PD
Tj, Tstg
1.5
12
-55 to +150
W
mW/°C
°c
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Ambient
(Note 1)
ROJA
200
°C/W
Thermal Resistance, Junction-to-Case
RBJC
83.3
°c/w
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. RajA is measured with the device soldered into a typical printed circuit board.
NPN
COLLECTOR
3
PNP
COLLECTOR
3
EMITTER
TO-92
EMITTER
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductorsassumes no responsibility for any errors or omissions discovered in its use
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Ounlitv