MPS6571 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
roduct:!, One.
Amplifier Transistor
NPN Silicon
COLLECTOR
3
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FAX: [phone]
MPS6571
EMITTER
MAXIMUM RATINGS
Rating
Collector- Emitter Voltage
Collector- Base Voltage
Emitter- Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
"c
PD
PD
TJ. Tstg
Value
20
25
3.0
50
625
5.0
1.5
12
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°c
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R9JA
200
Thermal Resistance, Junction to Case
RSJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
°C/W
°c/w
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage
(IC = 1-0 mAdc, lB = 0)
V(BR)CEO
20
Collector- Base Breakdown Voltage
(ic = ioonAdc, IE = O)
V(BR)CBO
25
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
'CBO
—
Emitter Cutoff Current
(VEB(off) = 3-0 Vdc, IC = 0)
IEBO
—
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Typ \x
—
—
—
—
—
50
—
50
Unit
Vdc
Vdc
nAdc
nAdc
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