MPS6565 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – NPN SILICON ANNULAR TRANSISTORS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
MPS6565 (SILICON)
MPS6566
TELEPHONE: [phone]
[phone]
FAX: [phone]
NPN SILICON ANNULAR TRANSISTORS
. . . designed for low-current amplif er applications.
• Collector Emitter Breakdown Voltage -
BVcEO" 15 Vdc (Win) @> Ic • 1.0 mAdc
• Output Capacitance -
Cob = 3 5 pF (Max) @ VCR "10 mAdc
• Full Designers Curves
NPN SILICON
AMPLIFIER
TRANSISTORS
MAXIMUM RATINGS
Rating
COHeCtOT-Einitter Voltage
Collector-Bale Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Comer Dissipation S> TA = 2S°C
Derate above 25°C
Total Power Dissipation » Tc = 2S°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V^£0
VCB
VEB
l£
PD
PD
TJ'Tstg
Value
45
60
4.0
200
360
28
1-0
8.0
-55toM50
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
n.W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R0JA11'
R0JC
Max
357
1^5
Unit
°C/W
°C/W
HI ^0JA ll measured with the device soldered into a typical printed circuit board
/
r-i
,LL^r
,,, ^JH ^{t\ (nfij}
SEATING-' C T 1 (1 ,
°^iT
STY1F1-
— ) Q 1—
.
1 J.
2. BASE
3. COLLECTOR
VlJ/
<l
B
S
T
t
MILLIMETERS INCHE S
DIM WIN MAX MIN N IAX
A 4.450 5.2M O.I7S d"205
B 3.180 4.190 0.125 ( IBS
C 4.320 5.330 OTTO 1 .210
D 0407 0.533 0.016 I.021
F 0.407 0.482 ITOlfi Q.019
K 12.700
-
Q.50ti
-
L 1.150 1.390 0.046 I.OSS
N
-
1.270 -
( oso
P 6.350
-
0.250
-
Q 3.430
- 0135
-
R 2.410 2670 0.09S C 10S
S 2.030 2.570 0080 [ 10S
TO-92
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in its use
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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