MPS6530 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistor

<$£mi-Conc[uckoi ^Pr
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, (inc.
Amplifier Transistor
NPN Silicon
COLLECTOR
3
TELEPHONE: [phone]
[phone]
FAX: [phone]
MPS6530
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector- Emitter Voltage
VCEO
40
Collector- Base Voltage
VCBO
60
Emitter- Base Voltage
VEBO
5.0
Collector Current — Continuous
ic
600
Total Device Dissipation @ TA = 25°C
PD
625
Derate above 25°C
Junction Temperature
Tj, Tstg
150
THERMAL CHARACTERISTICS
Vdc
Vdc
Vdc
mAdc
mW
°c
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
«8JA
0.2
°C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage
(IC = 10 mAdc, IB = O)
Collector- Base Breakdown Voltage
(IC = 10nAdc, IE = O)
Emitter- Base Breakdown Voltage
(lB = 10|iAdc, lc = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB =4°Vdc. 'E = o, TA= eo°c)
TO-92
Symbol
Win
Max
V(BR)CEO
40
—
V(BR)CBO
60
—
V(BR)EBO ^5.0
—
ICBO
0.05
2.0
Unit
Vdc
Vdc
Vdc
(lAdc
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
VI ^mi-Conductors encourages customers to verify that datasheets are current before placing orders
Ounlltv