MPS6521 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistors

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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MPS6521 (NPN)
MPS6523 (PNP)
Amplifier Transistors
Features
• Voltage and Current are Negative for PNP Transistors
MAXIMUM RATINGS
Rating
Collector- Emitter Voltage
Symbol NPN PNP Unit
VCEO
Vdc
MPS6521
25
MPS6523
25
Collector- Base Voltage
VCBO
Vdc
MPS6521
40
MPS6523
25
Emitter- Base Voltage
Collector Current - Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
lc
PD
4.0
Vdc
100
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ Tc = 25°C
PD
Derate above 25°C
1.5
W
12
mW/°C
Operating and Storage Junction
Temperature Range
Tj, Tstg -55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Ambient _RBJA
(Printed Circuit Board Mounting)
200
°C/W
Thermal Resistance, Junction-to-Case _ROJC
83.3
°c/w
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
COLLECTOR
3
COLLECTOR
3
EMITTER
EMITTER
MARKING
DIAGRAM
TO-92
MPS652x = Device Code
x = 1 or 3
A
= Assembly Location
Y
= Year
WW
= Work Week
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
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