MPS6512 Datasheet, PDF (1/2 Pages) Micro Electronics – NPN SILICON PLANAR EPITAXIAL TRANSISTORS

(l£ ii£U
C^
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, L/na.
TELEPHONE: [phone]
[phone]
FAX: [phone]
NPN
MPS6512
thru MPS6515
PNP
MPS6516
thru MPS6519
TO-92
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
MPS6512, MPS6513
MPS6514, MPS6515
MPS6516thru MPS6518
MPS6519
VCEO
Collector-Base Voltage
MPS6512thru MPS6515
MPS6516thru MPS6518
MPS6519
VCBO
Emitter-Base Voltage
VEBO
Collector Current — Continuous
ic
Total Device Dissipation <& T/\ 25°C
PD
Derate above 25°C
Total Device Dissipation (a. TC - 25°C
PD
Derate above 25°C
Operating and Storage Junction
Temperature Range
Tj, T8tg
NPN PNP
30
25
40
25
40
40
25
4,0
4,0
100
100
625
5.0
1.5
12
-56' to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Wans
mW/°C
•c
THERMAL CHARACTERISTICS
AMPLIFIER TRANSISTOR
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
RflJC
RAJA
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
" Characteristic
Symbol
Mln
Typ
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC - 0,6 mAdc, IB - 0)
MPS6512, MPS6513
MPS6514, MPS6515
VIB_•RICEO
30
25
——
dC - 0.5 mAdc, IB • 0)
MPS65t6 thru MPS6518
MPS6519
40
—
25
—
Emitter-Base Breakdown Voltage (Ig - 10 fiAdc, Ic » 0)
(IE - 10 M^dc, Ic • 0)
VIBRIEBO ^4,0
—
4.0
—
Collector Cutoff Current
(VCB = so Vdc, IE • 01
(VCB - so Vdc,IE - 01
ICBO
MPSBSIB thru MPSBSIS
——
, ^——
<VCB - 20vdc, IE - °>
MPSSSIS
—
—
Max
83.3
200
Max
'-.
•—
—'
—
—,
—
0.05
0.05
0,05
Unit
°c/w
3C/W
Unit
Vdc
.Vdc
/iAdc
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Seini-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors enunmiges customers to verify that datasheets ore current before placinu orders.