MPS6507 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
MPS6507
Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
Ic
PD
20
Vdc
30
Vdc
3.0
Vdc
50
mAdc
625
mW
5.0
mwrc
Total Device Dissipation @ TC= 25°C
PD
1.5
Watts
Derate above 25°C
12
mW/°C
Operating and Storage Junction
Temperature Range
Tj. Tstg
-55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RejA<1)
200
Thermal Resistance, Junction to Case
RHJC
83.3
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Win
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage <2)
(lc = 1.0 mAdc, IB = 0)
V(BR)CEO
20
Collector-Base Breakdown Voltage
(lc = 100nAdc, IE =0)
V(BR)CBO
30
Emitter-Base Breakdown Voltage
(IE = 100nAdc, lc =0)
V(BR)EBO
3.0
Collector Cutoff Current
(VCB = 15Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA = 60°C)
(CBO
—
ON CHARACTERISTICS
DC Current Gain<2>
(lc = 2.0 mAdc, VCE = 10 Vdc)
hFE
25
SMALL-SIGNAL CHARACTERISTICS
Current-Gain — Bandwidth Product
(lc = 1 0 mAdc, VCE = 1 0 Vdc, f = 1 00 MHz)
. fr
700
Output Capacitance
(VCB = 10 Vdc, lE = 0, f = 1.0 MHz)
Cobo
—
Small-Signal Current Gain
(lc = 2.0 mAdc, VCE = 10 Vdc, f = 20 MHz)
Ufa
20
1. ROJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width < 300 (is; Duty Cycle <; 2.0%.
23
TO-92 (TO-226AA)
COLLECTOR
3
BASE 1 ["XV
1
EMITTER
Typ
Max | Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
I
50
1.0
75
—
nAdc
nAdc
—
800
—
MHz
1.25
2.5
PF
—
—
—