MPS3906 Datasheet, PDF (1/2 Pages) Motorola, Inc – General Purpose Transistor

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
General Purpose Transistor
PNP Silicon
COLLECTOR
3
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MPS3906
EMITTER
MAXIMUM RATINGS
Rating
Collector- Emitter Voltage
Collector- Base Voltage
Emitter- Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
"c
PD
PD
Tj, Tstg
Value
-40
-40
-5.0
-200
625
5.0
1.5
12
-55to+150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
R0JA
200
Thermal Resistance, Junction to Case
R8JC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltagef1)
(IC = -1.0 mAdc, lB = 0)
Collector- Base Breakdown Voltage
(IC = -10|iAdc, IE = O)
Emitter- Base Breakdown Voltage
(lE = -10|iAdc, lc = 0)
Collector Cutoff Current
(VCE = -30 Vdc, VEB(0ff) = -3.0 Vdc)
Base Cutoff Current
(VCE = -30 Vdc, VEB(off) = -3.0 Vdc)
1. Pulse Test: Pulse Width = 300 (is; Duty Cycle = 2.0%.
Unit
°C/W
°c/w
TO-92
Symbol
Min
Max
V(BR)CEO ^{^0}
—
V(BR)CBO ^-40
—
V(BR)EBO ^-5.0
—
'CEX
—
-50
IBL
—
-50
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
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