MPS3904 Datasheet, PDF (1/2 Pages) Motorola, Inc – General Purpose Transistor

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duatoi tPioaucti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
USA General Purpose Transistor
NPN Silicon
COLLECTOR
3
fELEPHONE: [phone]
[phone]
MPS3904
1
EMITTER
MAXIMUM RATINGS
Rating
Collector- Emitter Voltage
Collector- Base Voltage
Emitter- Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
'c
PD
Value
40
60
6.0
100
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
TO-92
Total Power Dissipation @ T/\ 60°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
450
mW
PD
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55to+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R8JA
200
°C/W
R6JC
83.3
°c/w
ELECTRICAL CHARACTERISTICS OA =25°c unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector- Emitter Breakdown VoltageC1)
(IC = 1.0 mAdc, IB = O)
V(BR)CEO
40
—
Vdc
Collector- Base Breakdown Voltage
Oc = 10nAdc, IE = O)
V(BR)CBO
60
—
Vdc
Emitter- Base Breakdown Voltage
(!E = 10nAdc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB(off) = 3.0 Vdc)
Base Cutoff Current
(VCE = 30 Vdc, VEB(off) = 3.0 Vdc)
'CEX
—
50
nAdc
IBL
—
50
nAdc
1. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
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