MPS3826 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – NPN SILICON ANNULAR TRANSISTORS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
MPS3826 (SILICON)
MPS3827
, Una.
TELEPHONE: [phone]
[phone]
FAX: [phone]
NPN SILICON ANNULAR TRANSISTORS
NPN SILICON
AMPLIFIER TRANSISTORS
. . . designed for use in general-purpose amplifier applications.
• Collector Emitter Breakdown Voltage -
BVcEO = 45 Vdc (Win) @ \c - 10 mAdc
• High Current-Gain— Bandwidth Product -
f j * 600 MHr (Typl @ Ic - 10 mAdc
• Low Output Capacitance —
Cob - 2.2 pF (Typ) 9 VCB= 10 Vdc
MAXIMUM RATINGS
R>tin<
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Bate Voltage
Collector Current — Continuous
Total Powar Dissipation ® TA - 25°C
Derate above 2S°C
Total Power Dissipation » Tc - 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to Ambient (It
Thermal Resistance, Junction to Gate
Symbol
VCEO
VCB
VgB
IE
PD
PD
TJ. T«g
Value
45
60
4.0
100
350
2.8
1.0
8.0
-BBto-USO
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Symbol
Max
Unit
RflJA
3S7
°C/W
R«JC
125
°C/W
'1' R0JA '5 measured with the device soldered into a typical printed circuit boerd.
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-H Q H—
1
mr ^(rnjdri
STYLE 1
PIN \R
2
3
BASE
COLLECTOR
TO 92
NJ Semi-Conductors reserves the right to change test conditions,parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.