MPS3563 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Amplifier TVansistors

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
, One.
Amplifier TVansistors
NPN Silicon
TELEPHONE: [phone]
[phone]
FAX: [phone]
MPS918*
MPS3563
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T/\ 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
"c
PD
PD
TJ> Tstg
MPS918 MPS3563
15
12
30
30
3.0
2.0
50
350
2.8
0.85
6.8
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Symbol
Max
RflJA<1>
357
ROJC
147
Unit
°C/W
°c/w
TO-92
COLLECTOR
3
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
OC = 3.0 mAdc, IB = 0)
MPS918
MPS3563
Collector-Base Breakdown Voltage
(IC = 1.0|iAdc, le = 0)
(1C = 100 nAdc, IE = 0)
MPS918
MPS3563
Emitter-Base Breakdown Voltage
(lE = 10|iAdc, lc = 0)
MPS918
MPS3563
Collector Cutoff Current
(VcB = 15 Vdc, IE = O)
MPS918
MPS3563
1. ROJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width < 300 (is; Duty Cycle < 1.0%.
Symbol | Min
Max
Unit
V(BR)CEO
15
12
V(BR)CBO
30
30
V(BR)EBO
3.0
2.0
'CBO
Vdc
—
Vdc
—
Vdc
—
nAdc
10
50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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