MJE341 Datasheet, PDF (1/3 Pages) Motorola, Inc – 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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Plastic NPN Silicon
Medium-Power Transistors
. . . useful for medium voltage applications requiring high fr such as converters and
extended range amplifiers.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Base Current
Total Power Dissipation @ TC = 25° C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VCEO
VCB
VEB
ic
IB
PD
TJ. Tstg
MJE341 MJE344
150
200
175
200
3.0
5.0
500
250
20
0.16
-65 to-*- 150
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Watts
W/°C
°C
Symbol
Max
Unit
ejc
6.25
"C/W
MJE341
MJE344
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
150-200 VOLTS
20 WATTS
TO-225AA TYPE
1.0
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LU
QL
0.2
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O
0.05
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0.02
T
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150
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L
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ALL
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SECOND BREAKDOWNLIMP
BONDING WIRE LIMIT
THERMAL LIMIT Tc = 25°C
\s —
0.01
10
II
20 30 40 60
100
200 300
VCE, COLLECTOR-EMIHER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IG - VCElimits °f
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion then the curves indicate.
Quality Semi-Conductors
The data of Figure 1 is based on Tj(pk) = 150°C;Tc is vari-
able depending on conditions. Second breakdown pulse lim-
its are valid for duty cycles to 10% provided Tj(p|<) s 150°C.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less then the limitations
imposed by second breakdown.