MJE3055T Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – SILICON EPITAXIAL PLANAR TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
COMPLEMENTARY SILICON POWER TRANSISTORS
...designed for use in general-purpose amplifier and switching
applications
FEATURES:
* Power Dissipation - PD = 75 W © Tc = 25°C
* DC Current Gain hFE = 20 - 100 © lc = 4.0 A
* vCE(isrt) = 1-1 V (Max.) © lc = 4.0 A, IB = 400 mA
MAXIMUM RATINGS
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Total, Power Dissipation @TC=25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
'c
IB
PD
TJ >TSTO
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance Junction to Case Rejc
Rating
60
70
5.0
10
6.0
75
0.6
-55 to +150
Max
1.67
FIGURE -1 POWER DERATING
25 50 75 100 125 150
Tc, TEMPERATURECC)
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PNP
NPN
MJE2955T MJE3055T
Unit
V
V
V
A
A
W
W/°C
°C
10AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 VOLTS
75 WATTS
TO-220
I '» I
HW
Unit
°c/w
-44
PIN1.BASE
2.COLLECTOR
S.BmTER
4.COLLECTOR(CASe)
MILLIMETERS
DIM
MIN MAX
A 14.68 15.31
B
9.78 10.42
C
5.01 6.52
D 13.06 14.62
E
3.57 4.07
F
2.42 3.66
G
1.12 1.36
H
0.72 0.96
I
4.22 4.96
J
1.14 1.38
K
2.20 2.97
L
0.33 0.55
M
2.48
2.98
O
3.7D 3.90
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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