MJE13007 Datasheet, PDF (1/2 Pages) Motorola, Inc – POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
, One.
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MJE13007
SILICON NPN SWITCHING TRANSISTOR
. SGS-THOMSON PREFERRED SALESTYPE
. NPN TRANSISTOR
. HIGH CURRENT CAPABILITY
APPLICATIONS
. SWITCHING REGULATORS
. MOTOR CONTROL
DESCRIPTION
The MJE13007 is a silicon multiepitaxial mesa
NPN power transistor mounted in Jedec TO-220
plastic package.
It is are inteded for use in motor control, switching
regulators etc.
TO-220
INTERNAL SCHEMATIC DIAGRAM
Co (2)
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEV
VCEO
VEBO
Ic
ICM
IB
IBM
IE
IEM
Plot
Tstg
Tj.
Parameter
Collector-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (Ic = 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Emitter Current
Emitter Peak Current
Total Dissipation at Tc < 25 °C
Storage Temperature
Max. Operating Junction Temperature
Value
700
400
9
8
16
4
8
12
24
80
-65 to 150
150
Unit
V
V
V
A
A
A
A
A
A
W
°c
' °c "
NJ Semi-Conductors reserves the right to change test conditions,parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductorsis believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ .Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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