MJE1090 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
MJE1 090 mn, MJE1 093 PNP (S,LICON>
MJE2090,htuMJE2093
MJE1100.hruMJE1103NPN
MJE2100^MJE2103
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PLASTIC MEDIUM-POWER
COMPLEMENTARY SILICON TRANSISTORS
Designed for use in driver and output stages in complementary
audio amplifier applications.
• High DC Current Gam -
hcg = 750 (Win) @ IG = 30and 4 0 Adc
• True Three Lead Monolithic Construction — Emitter-Base Resistors
to Prevent Leakage Multiplication are Built in.
• Available in Two Packages - Case 90 or Case 199
5.0 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON
60-80 VOLTS
70 WATTS
MJE1090
MJE109I
MJE1092
MJE1093
MJEItOO
MJE1101
MJE1102
MJE1103
MAXIMUM RATINGS
RiTino
Collector-Enrnttr Voltage
Collector-Bau Voltage
Ernimr-Batt Voltage
Collector Current
6vte Current
Total Device Diiupation @ Tc • 25°C
Derate above 25°C
Operating and Storage Junction
Ternperatinq Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
Symbol
VCEO
VCB
VEB
'c
>B
PD
TJ' Titg
MJE1090 _MJE1092
MJE10B1 MJE1M3
MJE1100 MJE1102
MJE1U1 MJE1103
MJE2MO MJE2092
MJEJOB1 MJE2003
MJE2100 MJEZ102
MJE2101 MJE2103
60
80
60
80
5.0
50
01
70
056
-55to»150
Unit
Vdc
Vdc
ViJc
Adc
Adc
Watts
W/°C
°C
Symbol
M»
Unit
OJC
1.8
°C/W
FIGURE 1- POWER DERATING
CASE 90-05
MJE2090
MJE20S1
MJE20S5
MJE20S3
MJE210Q
MJE3101
MJE2102
MJE2103
X
NX
Nk.
N\
20 ID
60
U 100 120 140 ISC
TC, CAS£TEMKRATU»E(0C)
CASE 199-04
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and pa^ftge dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verity that datasheets are current before placing orders.
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