MJ8504 Datasheet, PDF (1/2 Pages) Motorola, Inc – NPN SILICON POWER TRANSISTORS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
One,
MJ8504
MJ8505
TELEPHONE: [phone]
[phone]
FAX: [phone]
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SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS
The MJ8504 and MJ8505 transistors are designed for high-
voltage, high-speed, power switching in inductive circuits where fall
time is critical. They are particularly suited for line operated switch-
mode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn-Off Times
75 ns Inductive Fall Time -25°C (typ)
150 ns Inductive Crossover Time -25°C (typ)
1. 25Ais Inductive Storage Time -25°C (typ)
Operating Temperature Range —65 to + 200°C
100°C Performance Specified for:
Reverse-Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
1
10 AMPERE
NPN SILICON
POWER TRANSISTORS
700 and 800 VOLTS
176 WATTS
Designer's Data for
"Worst Case" Condition!
The Designers Data Sheer pn
mits the design of most circuit*
entirely from the information im-
sented Limit data - representing
device characteristics boundaries
are given to facilitate "worst cav
design
•
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
Peak (1 1
Base Current - Continuous
Peak It)
Total Power Dissipation @ Tc - 25°C
@ TC - 100°C
Derate above 25°C
.
Operating and Storage Junction
Temperature Range
Symbol
VCEOIsusI
VCEV
VEB
'CM
IB
IBM
P°
Tj,T«9
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
(1 1 Pulse Test: Pulse Width - 5 ms. Duty Cycle < 10%.
MJ8S04 MJ8SOS
700
800
1200
1400
8.0
8.0
10
10
15
15
8
8
12
12
175
175
100
100
1.0
1.0
-65 to +200
Symbol
Max
R9JC
1.0
TL
275
Unit
Vdc
Vdc
Vdc
Adc
Adc
watts
W/°C
°C
Unit
°C/W
°C
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NOTES
2. [T]lSSE TING PLANE AND DATUM
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Quality Semi-Conductors