MJ802 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(30A,100V,200W)

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SPRINGFIELD, NEW JERSEY 07081
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MJ802
High-Power NPN Silicon
Transistor
This transistor is for use as an output device in complementary audio
amplifiers to 100-Watts music power per channel.
Features
• High DCCurrent Gain - hFE = 25-100 i i l c = 7.5 A
• Excellent Safe Operating Area
• Complement to thePNPMJ4502
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25 °C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCER
VCB
VCEO
VEB
Ic
IB
PD
Tj,Tstg
Value
Unit
100
Vdc
100
Vdc
90
Vdc
4.0
Vdc
30
Adc
7.5
Adc
200
W
1.14 wrc
-65 to +200 °c
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
0JC
0.875
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
30 AMPERE
POWER TRANSISTOR
NPN SILICON
100 VOLTS - 200 WATTS
(TO-3)
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