MJ431 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – 10 Amp NPN Silicon Power Transistors 125W

tSs.mi-C.ondii.ckoi ^Pioaucki, Dna.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MJ413
MJ423
MJ431
TELEPHONE: [phone]
[phone]
FAX: [phone]
Features
• High Collector-Emitter Voltage VCEs=400V
• DC Current Gain Specified 3.5A
• High Frequency Response to 2.5 MHz
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance: 1.0°C/W junction to case
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Total Device Dissipation @TC=25°C
Derate above 25°C
Symbol
VCEX
VCB
VEB
Ic
IB
PD
Max
400
400
5.0
10
2.0
125
1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
w/°c
Figure 1 - Power Derating Curve
.3
ra
D.
I
0
50
100
150
Temperature °C
Power Dissipation (W) - Versus - Temperature °C
10 Amp
NPN Silicon
Power Transistors
125W
TO-3
E
~l
f
—»
T I *I c
K
u —H
v—i —
H
1
1 J^^..|4|....!j!^i^.
T.
t
V/A iA is G ^B
,^^ t
f ^^{— Q}
PIN1.
PIN 2.
CASE.
BASE
EMITTER
COLLECTOR
DIMENSIONS
INCHES
DIM
MIN
MAX
A
1.550 REF
8
1.050
C
250
335
D
.038 ,043
E
0,55 0.70
G
.430 BSC
H
,215 BSC
K
.440 ,480
L
665 BSC
N
.830
Q
151
165
U
1.187 BSC
V
131
188
MM
MIN
39 37
MAX
REF
2667
6.35 8.51
0,97 1,09
1,40 1,77
1092
5.46
BSC
BSC
1118 1 2 1 9
1689 BSC
21.08
384
419
30,15 BSC
333 [ 4.77
NOTE
(?)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors