MJ4030 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(16A,60-100V,150W)

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
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MEDIUM-POWER COMPLEMENTARY
SILICON TRANSISTORS
...designed for use as output devices in complementary general purpose
amplifier applications.
FEATURES:
* High Gain Darlington Performance
* DC Current Gain hFE = 3500(Typ) Q lc = 10 A
* Monolithic Construction with Built-in Base-Emitter Shunt Resistor
MAXIMUM RATINGS
Characteristic
Symbol MJ4030 MJ4031 MJ4032 Unit
MJ4033 MJ4034 MJ4036
Collector-Emitter Voltage
COIIector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base Current
VCEO
VCBO
VEBO
lc
'CM
IB
Total Power Dissipation @TC= 25°C _PD
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ 'TSTQ
60
80
100
60
80
100
5.0
16
20
0.5
150
0.857
- 65 to +200
V
V
V
A
A
W
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance Junction to Case Rajc
1.17
Unit
°c/w
150
!125
MOO
75
50
26
FIGURE -1 POWER DERATING
25 50 75 100 125 150 175 200
Tc , TEMPERATXJRE('C)
PNP
MJ4030
MJ4031
MJ4032
NPN
MJ4033
MJ4034
MJ4035
16 AMPERE
COMPLEMENTARY
SILICON POWER
DARLINGTON TRANSISTOR
60-100 VOLTS
150 WATTS
TO-3
KE
PIN 1.BASE
2.EMHTER
COUECTOR<CASE)
MILLIMETERS
DIM
MIN MAX
A 38.75 39.96
B 19.28 22.23
C
7.96 9.28
D 11.18 12.19
E 25.20 26.67
F
0.92 1.09
G
1.38 1.62
H 29.90 30.40
I 16.64 17.30
J
3.88 4.36
K 10.67 11.18
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at (he time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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