MJ16016 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

, LJna.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
Silicon NPN Power Transistor
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEOOUS) = 450V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
• Switching regulators
• Inverters
• Solenoid and relay drivers
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV Collector-Emitter Voltage
850
V
VcEO(SUS) ^{Collector-Emitter Voltage}
450
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
10
A
IBM
Base Current-Peak
20
A
PC
Collector Power Dissipation@Tc=25°C 250
W
Tj
Junction Temperature
200
'C
Tstg
Storage Temperature
-65-200 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance, Junction to Case}
MAX
0.7
UNIT
•c/w
TELEPHONE: [phone]
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FAX: [phone]
MJ16016
3
I
1
f
"*N
2
PIN 1.6ASE
2 BETTER
3. COLLECT OR (CASE)
TO-3 package
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t^.
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i1
17 _I
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V-,
A ^{xT/L^x /}
t
^N^ ^/
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:^ct
i^•ran
i
•^' f
IMIII
DIM MM MAX
A
3900
B 25.30 36.67
C
9.3fl 11.10
D 0.90 1 .10
E
2.90 lid
G
109?
K
546
K 1140 13.50
L 1675 17.05
H 19.40 19.62
0
4.00 4.20
0 30 00 30 20
V
430 4.50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
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