MJ16014 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
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Silicon NPN Power Transistor
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
:VCEo(sus) = 450V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
• Switching regulators
• Inverters
• Solenoid and relay drivers
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE UNIT
VCEV Collector-Emitter Voltage
850
V
VcEO(SUS) Collector-Emitter Voltage
450
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
20
A
ICM Collector Current-Peak
30
A
IB
Base Current-Continuous
10
A
IBM
Base Current-Peak
20
A
PC
Collector Power Dissipation@Tc=25°C 250
W
Tj
Junction Temperature
Tstg ^{Storage Temperature}
200
°C
-65-200 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c ^{Thermal Resistance, Junction to Case 0.7 °c/w}
TELEPHONE: [phone]
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FAX: [phone]
MJ16014
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PIN t.BASE
1
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2, EMITTER
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DIM MIN MAX
A
3900
B 25.30 26.67
C 9.30 11.10
D 0.90 1.10
E 2.90 3.10
G
1092
H
546
^ 11.40 13.50
L 16,75 17.05
N 19.40 19.62
0_ 400 420
U 3000 ³⁰²⁰
V
430 4,50
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