MJ16010 Datasheet, PDF (1/3 Pages) Motorola, Inc – 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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Designer's™ Data Sheet
SWITCHMODE Series
NPN Silicon Power Transistors
These transistors are designed for high-voltage, high-speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for
line-operated switchmode applications. The MJ16012 and MJW16012 are selected
high gain versions of the MJ16010 and MJW16010 for applications where drive
current is limited.
Switching Regulators
Inverters
Solenoids
Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn-Off Times — TC = 100°C
50 ns Inductive Fall Time (Typ)
90 ns Inductive Crossover Time (Typ)
800 ns Inductive Storage Time (Typ)
100°C Performance Specifiedfor:
Reverse-Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MJ16010
MJW16010
MJ16012*
MJW16012
15 AMPERE
NPN SILICON
POWER TRANSISTORS
450 VOLTS
135 AND 175 WATTS
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current — Continuous
-Peak(1)
Base Current — Continuous
-Peak(1)
Total Device Dissipation
@TC = 25°C
@Tc = 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCEV
VEB
IG
'CM
IB
IBM
PD
TJ. Tstg
MJ 16010 MJW16010
MJ16012 MJW16012
450
850
6.0
15
20
10
15
1 75
100
1.0
-65 to 200
135
538
1.11
-55 to 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
Lead Temperature for Soldering
Purposes, 1/8"from Case for
5 Seconds
RSJC
TL
(1) Pulse Test: Pulse Width s 50 us, Duty Cycle > 10%
Max
1.0
0.93
275
Unit
°C/W
°c
(TO-3)
MJ16010
MJ16012
TO-247AE
MJW16010
MJW16012
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