MJ15011 Datasheet, PDF (1/3 Pages) Motorola, Inc – 10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS

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Advance Information
Complementary Silicon Power
Transistors
The MJ15011 and MJ15012 are PowerBase power transistors designed for
high-power audio, disk head positioners, and other linear applications. These devices
can also be used in power switching circuits such as relay or solenoid drivers,
dc-to-dc converters or inverters.
• High Safe Operating Area (100% Tested)
1.2 A @ 100V
• Completely Characterized for Linear Operation
• High DC Current Gain and Low Saturation Voltage
hFE = 20 (Min) @ 2 A, 2 V
VcE(sat) = 2.5 V (Max) @ lc = 4 A, IB = 0.4 A
• For Low Distortion Complementary Designs
NPN
MJ15011*
PNP
MJ15012*
•Motorola Preferred Device
10 AMPERE
COMPLEMENTARY
POWER TRANSISTORS
250 VOLTS
200 WATTS
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current — Continuous
— Peak(1)
Emitter Current— Continuous
— Peak(1)
Total Power Dissipation @ Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purposes
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <, 10%.
Symbol
VCEO
VCEX
VEB
ic
'CM
IB
'BM
IE
'EM
PD
TJ, Tstg
Symbol
Rejc
TL
(TO-3)
Value
250
250
5
10
15
2
5
12
20
200
1.14
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
W/°C
°C
Max
0.875
265
Unit
°C/W
°c
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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