MJ13334 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

, Una..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
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[phone]
FAX: [phone]
MJ13334
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switchmode applications.
• Switching regulators
• Inverters
• Solenoid and relay drivers
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25"C)
SYMBOL
PARAMETER
VALUE UNIT
VCEV ^{Collector-Emitter Voltage}
750
V
VCEO ^{Collector-Emitter Voltage}
450
V
VEBO ^{Emitter-Base Voltage}
6
V
Ic
Collector Current-Continuous
20
A
ICM ^{Collector Current-Peak}
30
A
IB
Base Current-Continuous
10
A
IBM
Base Current-Peak
15
A
PC
Collector Power Dissipation@Tc=25'C 175
W
Tj
Junction Temperature
200
•c
Tstg ^{Storage Temperature}
-65-200 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rttl j-C ^{Thermal Resistance, Junction to Case}
1.0
°c/w
•-tj
PIN I.BASE
I. ByllTTER
3. COLLECT OR (CASE)
TO-3 package
IT _{T~ :} ^{r L -N-1}
1t
L 1—, C
-*IU— D 2 PL
t^v—^{-.\l^h/_—}
p_j^{u-—L-*^t}
TL ^
A^CT
t
B
tP
Vj ^X
C
1
I
'u_13B
DM
A
B
c
D
E1
GF
K
^L
N
4
U
V
nun
MM MAX
3900
25.30 26.67
9.30 11.10
090 1.10
2.90 3.10
10.92
546
11.40 13.50
1675 17.05
19.40 1962
4.00 420
30.00 ^30.20
4.30 450
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notice, Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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