MJ13333 Datasheet, PDF (1/2 Pages) Motorola, Inc – 20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, LJne.
TELEPHONE: [phone]
[phone]
FAX: [phone]
M J13333 Silicon NPN Power Transistor
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switchmode applications.
• Switching regulators
• Inverters
• Solenoid and relay drivers
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25*C)
SYMBOL
PARAMETER
VALUE UNIT
VCEV Collector-Emitter Voltage
700
V
VCEO ^{Collector-Emitter Voltage}
400
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
10
A
IBM
Base Current-Peak
15
A
PC
Collector Power Dissipation@Tc=25'C 175
W
Tj
Junction Temperature
200
"C
Tstg
Storage Temperature
-65-200 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance,Junction to Case}
MAX
1.0
UNIT
°c/w
V^?x'^ifi cE)*xJ
^^fr
3
J
PIN 1.BASE
1 If
2. EMITTER
^S
3. COLLECTOR (CASE)
2
TO-3 package
1ⁱ
i
I —L I C
tE
I
t
rL-q /^ ^{JL-Da«. u*}
I-4N '/
&7$--<8
<^;:
Bf
> | P f *
'
nvn
DW MM IUX
A
B
25»^39'00ai«y
Q 9.30 11.10
0 0.90 1.10
i 2.M 3,10
G
10.92
H
140
K 1149 1350
I 16.75 1705
N 13.40 19B2
0 «.00 4.20
U 300) ³⁰²⁰
V 4.30 420
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors