MJ13332 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistor

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, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
MJ13332
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VcEO(sus) = 350V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
• Switching regulators
• Inverters
• Solenoid and relay drivers
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE UNIT
VCEV Collector-Emitter Voltage
650
V
VCEO ^{Collector-Emitter Voltage}
350
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
10
A
IBM
Base Current-Peak
15
A
PC
Collector Power Dissipation@Tc=25'C
175
W
Tj
Junction Temperature
200
°C
Tstg
Storage Temperature
-65-200 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R(h j-c
Thermal Resistance, Junction to Case
MAX
1.0
UNIT
"C/W
3
I PIN 1.BASE
1f
2. EMITTER
^\. COLLECT OR (CASE)
2
TO-3 package
t-E
r-N-I
• _J—
|
I
:^C
-*IU— D 2 PL
i;
-I3EI
\ 1 . f
V-_ ^{Mjfr-5_$ Ci B}
t
/ 1' I
M3a
nun
DIM MM MAX
A
3900
B 2i^{5.30 26.67}
C
i^{J.30 11.10}
D
()90 110
E
2!.90 3.10
JL
10.92
H
546
K 1 .40 13.50
L N5.75 17.05
N 13.40 19.62
Q
4.00
420
U 3DiQQ 30.20
V
«.30 450_
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