MJ13080 Datasheet, PDF (1/2 Pages) Motorola, Inc – NPN SILICON POWER TRANSISTORS

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MJ13080
MJ 13081
SWITCHMODE II SERIES
NPN SILICON POWER TRANSISTORS
The MJ 13080 and MJ1308T transistors are designed for high*
voltage, high-speed, power switching in inductive circuits where fall
time is critical. They are particularlysuitedfor line-operated switch-
mode applications such as:
• Switching Regulators
b
• Inverters
5
• Solenoid and Relay Drivers
T W°
• Motor Controls
L-K|
• Deflection Circuits
xti/
Fast Turn-Off Times
-X,
100 ns Inductive Fall Time @ 25°C (Typ]
150 ns Inductive Crossover Time @ 2S°C (Typ|
400 ns Inductive Storage Time <o> 25°C (Typ)
Operating Temperature Range -85 to+200°C
1 00°C Performance Specified for:
Reverse-Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltege
Emitter Base Voltage
Collector Current — Continuous
-Pa«k(1)
Base Current — Continuous
-Peak(l)
Total Power Dissipation @ TC - 26°C
@TC'1OO°C
Derate above 25°C
Operating end Storage Junction
Temperature Range
Symbol
VCEO
VCEV
VEB
Irj
ICM
IB
IBM
PD
Tj, Tsig
MJ 13080 MJ13081 Unit
400
450
Vdc
650
750
Vdc
6.0
Vdc
8.0
Adc
12
3.0
Adc
6.0
ISO
856
0.86
Watts
W/°C
-66 to +200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum Lead Temperature for Soldering
TL
Purposes: 1/8' from Cose for 5 Seconds
(1) Pulse Test: Pulse Width - 5 ms, Duty Cycle f, 10%.
Mai
1 17
27B
Unit
°C/W
°C
8 AMPERE
NPN SILICON
POWER TRANSISTORS
400 AND 460 VOLTS
ISO WATTS
Designer's Data for
"Woiet Case" Conditions
The Designer's Data Sheet permits
the design of most c rcuits entirely from
the information presented. Limit data
— representing device characteristics
boundaries — are given to facilitate
"worst cese" design.
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