MJ12004 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon NPN Power Transistor
DESCRIPTION
• Collector-Emitter Voltage-
VCEx= 1500V
• Safe Operation Area
• Switching Time with Inductive Load
APPLICATIONS
• Designed for use in large screen color deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCEX
Collector-Emitter Voltage
1500
V
VcEO(SUS) Collector-Emitter Voltage
750
V
VEBO Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
5
A
IB
Base Current-Continuous
4
A
IE
Emitter Current-Continuous
9
A
PC
Collector Power Dissipation@Tc=25°C
100
W
Tj
Junction Temperature
150
°c
Tstg
Storage Temperature
-65-150 "C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance, Junction to Case}
MAX
1.25
UNIT
°c/w
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MJ12004
1
PIN 1.BASE
|X^
2. EMITTER
k.
3. COLLECT OR (CASE)
1
TO-3 package
2
t
f
11
t-E
g
C
i
-•JU- D 2 PL
v, rJUS r ^13H
1
?^{/ 1 \ /^k^\}
t
SL 4L d
\1_><_^p _-/
c^;
J
B^t
1
I IN II
DM MM IUX.
A
3900
B 2530 26,67
C
780 8,30
0 090 1.10
E
1 40 1.60
Q
1092
H
546
K 11.40 1350
L 1675 1706
N 19.40 1962
Q
4.00 4.20
U 30.00 ³⁰²⁰
V
4.30 4,50
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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