MJ11028 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTOR(50A,60-120V,300W)

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Dnc.
MJ11028, MJ11030,
MJ11032 (NPN)
MJ11029, MJ11033 (PNP)
High-Current
Complementary Silicon
Power Transistors
High-Current Complementary Silicon Power Transistors are for use
as output devices in complementary general purpose amplifier
applications.
Features
• High DC Current Gain - hFE = 1000 (Min) @ Ic = 25 Adc
hFE = 400 (Min)@ Ic = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated Ic
• Monolithic Construction with Built-in Base-Emitter Shunt Resistor
• Junction Temperature to + 200 °C
MAXIMUM RATINGS (Tj = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
MJ1 1 028/29 _VCEO
MJ11030
MJ1 1032/33
60
Vdc
90
120
Collector-Base Voltage
MJ1 1 028/29 _VCBO
MJ11030
MJ 11 032/33
60
Vdc
90
120
Emitter-Base Voltage
Collector Current - Continuous
-Peak (Note 1)
VEBO
Ic
5.0
Vdc
50
Adc
100
Base Current - Continuous
Total Power Dissipation @ Tc = 25°C
Derate Above 25°C @ Tc = 100°C
IB
2.0
Adc
PD
300
W
1.71
W/°C
Operating and Storage Junction
Temperature Range
Tj,Tstg -55to+200 "C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Maximum Lead Temperature tor
Soldering Purposes for < 10 seconds
TL
275
°C
Thermal Resistance, Junction-to-Case
R6JC
0.58 °c/w
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions).and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 [is. Duty Cycle < 10%.
Quality Semi-Conductors
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50 AMPERE
COMPLEMENTARY
DARLINGTON POWER
TRANSISTORS
60-120 VOLTS
300 WATTS
NPN
COLLECTOR
CASE
PNP
COLLECTOR
CASE
EMITTER 2
MJ11028
MJ11030
MJ11032
EMITTER 2
MJ11029
MJ11033
rro-3)