MJ11011 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(30A,60-120V,200W)

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY07081
U.S.A.
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
..designed for use as output devices in complementary general
purpose amplifier applications.
FEATURES:
* High Gain Darlington Performance
* High DC Current Gain hFE = 1000(Min) @ lc = 20 A
* Monolithic Construction with Built-in Base-Emitter Shunt Resistor
MAXIMUM RATINGS
Characteristic
Symbol MJ11011 MJ11013 MJ1101S
MJ11012 MJ11014 MJ11016
TELEPHONE: [phone]
[phone]
FAX: [phone]
PNP
NPN
MJ11011 MJ11012
MJ11013 MJ11014
MJ11015 MJ11016
Unit
30 AMPERE
COMPLEMENTARY
SILICON POWER
DARLINGTON TRANSISTOR
60-120 VOLTS
200 WATTS
Collector-Emitter Voltage
COIIector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base Current
Total Power Dissipation ©Tc= 25°C
Derate above 25°C
VCEO
VCBO
VEBO
'c
'CM
IB
PD
Operating and Storage Junction
Temperature Range
Tj i^STO
60
90
120
60
90
120
5.0
30
50
1.0
200
1.15
- 65 to +200
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance Junction to Case Rejc
0.87
V
V
V
A
A
W
W/°C
°C
Unit
°c/w
200
t 175
|l50
§125
I 1°°
5 75
I^
' 25
FIGURE -1 POWER DERATING
XN
N
^\
'x
V
N.
\
25 50 75 100 125 150 175 200
TC,TEMPERATURE('C)
TO-3
^
.-H—1 ..
Hi F
j
,—iJ
~\ _/tti~]E
X_{I* *. i.i,/—^.. ...i}
A
PIN 1 BASE
Z.EMfTTER
COLLECTOR(CASE)
ni_LSI ^u_vi
MILLIMETERS
MIN MAX
A 38.75 39.96
B 19.28 22.23
C
796 9.23
D 11.18 12.19
E 25.20 26.67
F
0.92 1.09
G
1.38 1.62
H 29.90 30.40
I 16.64 17.30
J
3.88 4.36
K 10.67 11.18
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