MJ10015 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(50A,400-500V,250W)

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MAXIMUM RATINGS
Hating
Collector-Emitter Voltage
Cc-nector-Erri'iter Voltage
Efin.tter Bile Voilage
Collector Current - Continuous
- Peak (II
Base Current - Cominoui
- Peek 111
Total Power Diinpition * T c * 2S°C
» T C - 100°C
Dt'itf ibovl !5°C
Optrating and Storage Junction
Ttrttptrtturt Range
Symbol
VCEO
VCEV
VEB
>c
ICM
IB
'BM
"0
TJ. Titg
THERMAL CHARACTERISTICS
Characteristic
Thermal Rtlimnce, junction to Can
Maximum 1_ead Temperature lor Soldering Purposes:
1/8" Irom Cafe for 5 Seconds
1 1 1 Pulse Ten : Puue Width - 5 mi, Duty Cycle < 1 0*
MJ10015 MJ10016
400
500
600
700
80
50
76
10
15
250
143
1.43
-6610+200
Symbol
RSJC
TL
Man
0.7
275;
Unli
Vdc
Vde
Vdc
Adc
Ade
W»lti
vy/°c
°C
Unit
°CMI
«c
TELEPHONE: [phone]
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MJ10015
MJ10016
50 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
400 >nd BOO VOLTS
ISO WATTS
ELECTRICAL CHARACTERISTICS trc . ?t°c uniM. oth.rwi.. K
Characteristic
OFF CHARACTERISTICS 111
Coileclor-Emitlet Sustaining Voltage (Table 1 1
IIC • 100 T A , IB • 0. Va,mp • Baled VCEO>
Collector Cutoll Current
IVrjEv • Rated Value. VSE|0(I| • 1.6 Vdcl
Emitter Cutoll Current
IVEB • 3.0Vac. l£ • 0)
MJ10015
MJ10016
SECOND BREAKDOWN
Second Breakdown Collector Current with Bate Forward Biased
Climptd Inductive 50A With Bate Reverie Bieseri
ON CHARACTERISTICS 111
DC Current Gam
IIC • 20 Adc. VCE • 6.0 Vdcl
llf; • 40 ASC. VCE • 6.0 Vdcl
CollKtO'.Cmilter Saturation Voltage
IIC " 20 Adc. IB * 1.0 Adcl
|IC • 60Aac. IB • 10 Adcl
Base-Emitter Saturation Voitaoe
M C - Z O A O C . ie • 1.0 Adcl
Diode Forward Voltage 121
llf • 20 Adcl
DYNAMIC CHARACTERISTIC
Output Capacitance
IVC8 • 10 Vdt. IE • 0. !„,, • 100 kHll
Symbol
Mln
Ty»
MM
Unli [
vCEOItusl
400
500
ICEV
_
Vdc
-
-
-
_
-
0.26
mAdc
'EBO
.
_
350
fflAdc
'S/b
RBSOA
SM Figure 7
S«« FigureS
hFe
26
10
vCEIiall
-
-
_
vBE(lat)
V|
_
_
_
_
-
_
Vdc
-
J.Z
-
S.O
_
J.7S
Vdc
2.5
6.0
Vdc
Cob
-
-
750
Pf
SWITCHING CHARACTERISTICS
Resistive Loed (Table 11
Delay Time
Rise Time
Storage Time
Fan Time
(Vcc ' 250 Vdc,Ic 'J0 A,
1 j, • 1 .0 Adc, VBE|0ff| • 6 Vdc, tp • 26 us
Duty Cycle f 2%l.
Inducnve Load. Ciamped 'Table 1)
Id
-
0.14
04
Ml
'I,
0.3
tjO
Mi
l|
-
0.8
2J5
Ml
<l
-
0.3
1.0
Ml
Stoiage Time
Crossover Time
t i C • 20 Alpkl, V ,,„„,„ «260 V, |BI - 1,0 A,
"SEIolll " B'° vacl
>IV
-
1.0
»
Ml
'c
"
0.3«
Ml
1 1 ) PulM Tell , Puiif WK»n * 300 MI. Duly Cvcl* * 2*.
'-
(31 Thf mt*rn«4 CoHecior-to-Emitter diode c*n *timin*n ih* nwd toi en *Ki»rnal dlodt to cl»m0 irtdu«tivt lo«di. T«tt h*w «hown thai
the Forward Recovery VoKiQt t V j t ol ihli died* U compjrable to thai of typtcil (att r«eov*ry ractilia.**,
!TVl[ I
UN I IASE
1 {Mirttn
CAte
MIUUIMMIITTOOt
MISI.I I MM
KM 11
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(TO-3 TYPE)