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MJ10005 Datasheet, PDF (1/2 Pages) Motorola, Inc – 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i, Una.
MJ10005
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973)376-8960
SWITCHMODE Series
NPN Silicon Power Darlington
Transistor with Base-Emitter
Speedup Diode
20 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
400 VOLTS
175 WATTS
The MJ 10005 Darlington transistor is designed for high-voltage, high-speed,
power switching in inductive circuits where fall time is critical. It is particularly suited
for line operated switch mode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
h.«7S -J
MAX. \ 135 MAX.
Fast Turn-Off Times
40 ns Inductive Fall Time — 25°C (Typ)
650 ns Inductive Storage Time — 25°C (Typ)
SEATING
Operating Temperature Range -65 to +200°C
100°C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
.168 MAX.
BOTH ENDS
MAXIMUM RATINGS
.MS R MAX.
Rating
Symbol
Value
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current — Continuous
— Peak(1)
Total Power Dissipation @ TC = 25°C
@TC = 100°C
Derate above 25°C
VCEO
400
VCEX
450
VCEV
500
VEB
8.0
to
20
ICM
30
IB
2.5
!BM
5.0
PD
175
100
1.0
Operating and Storage Junction Temperature Range
TJ.Tstg
-65 to +200
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Case
Rejc
1.0
Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 5 Seconds
TL
275
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle £ 10%.
TO-3
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Unit
"C/W
"C
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notice information fomished by NJ Semiconductors is believed to be both accurate and reliable at the time of goina to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discoveVed in its use N I
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